triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 5 may 2009 ag303-86 ingap hbt gain block product features ? dc ? 6000 mhz ? 20.5 db gain @ 900 mhz ? +14 dbm p1db @ 900 mhz ? +26 dbm oip3 @ 900 mhz ? single voltage supply ? internally matched to 50 ? robust 1000v esd, class 1c ? lead-free/rohs-compliant sot- 86 package applications ? mobile infrastructure ? catv / fttx ? wlan / ism ? rfid ? wimax / wibro product description the ag303-86 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. at 900 mhz, the ag303-86 typically provides 20.5 db gain, +26 dbm oip3, and +14 dbm p1db. the device combines dependable performance with consistent quality to maintain mttf values exceeding 1000 years at mounting temperatures of +85 c and is housed in a lead- free/rohs-compliant sot-86 (m icro-x) industry-standard smt package. the ag303-86 consists of a darlington-pair amplifier using the high reliability ingap/gaas hbt process technology and only requires dc-blocking capacitors, a bias resistor, and an inductive rf choke for operation. the broadband mmic amplifier ca n be directly applied to various current and next ge neration wireless technologies such as gprs, gsm, cdma, and w-cdma. in addition, the ag303-86 will work for other various applications within the dc to 6 ghz frequency range such as catv and wimax. functional diagram function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz dc 6000 test frequency mhz 900 gain db 20.4 input return loss db 22 output return loss db 20 output p1db dbm +14 output ip3 (2) dbm +26.1 output ip2 dbm +34 noise figure db 3 test frequency mhz 1900 gain db 16.9 18.1 18.9 output p1db dbm +12.7 output ip3 (2) dbm +24.8 device voltage v 4.23 device current ma 35 1. test conditions: t = 25 oc, supply voltage = +5 v, r bias = 22.1 , 50 system. 2. 3oip measured with two tones at an output power of -2 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -55 to +125 c dc voltage +5 v rf input power (continuous) +10 dbm thermal resistance, rth 335 c/w junction temperature +177 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (1) parameter units typical frequency mhz 500 900 1900 2140 s21 db 21.1 20.4 18.1 17.5 s11 db -21 -22 -26 -25 s22 db -22 -20 -16 -16 output p1db dbm +14. 0 +14.0 +12.7 +12.4 output ip3 dbm +26. 4 +26.1 +24.8 +24.4 noise figure db 2.9 3.0 3.2 3.2 ordering information part no. description AG303-86G ingap hbt gain block (lead-free/rohs-complia nt sot-86 package) ag303-86pcb 700 ? 2400 mhz fully assembled eval. board standard tape / reel size = 3000 pieces on a 13? reel rf out rf in gnd gnd 1 2 3 4 downloaded from: http:///
triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 5 may 2009 ag303-86 ingap hbt gain block typical device rf performance supply bias = +5 v, r bias = 22.1 , i cc = 35 ma frequency mhz 100 500 900 1900 2140 2400 3500 5800 s21 db 21.4 21.1 20.4 18.1 17.5 16.9 14.9 11.4 s11 db -25 -21 -22 -26 -25 -25 -25 -25 s22 db -19 -22 -20 -16 -16 -15 -15 -14 output p1db dbm +14.2 +14.0 + 14.0 +12.7 +12.4 +12.1 +9.3 output ip3 dbm +26.5 +26.4 +26.1 +24.8 +24.4 +23.9 noise figure db 2.9 2.9 3.0 3.2 3.2 3.2 1. test conditions: t = 25 oc, supply voltage = +5 v, device voltage = 4.23 v, rbias = 22.1 , icc = 35 ma typical, 50 system. 2. 3oip measured with two tones at an output power of -2 db m/tone separated by 10 mhz. the suppression on the largest im3 prod uct is used to calculate the 3oip using a 2:1 rule. 3. data is shown as device performance only. actual implementation for the desired frequency band will be determined by exter nal components shown in the application circuit. gain vs. frequency 12 14 16 18 20 22 24 01234 frequency (ghz) gain ( db ) -40 c +25 c +85 c return loss -40 -30 -20 -10 0 0123456 frequency (ghz) s11, s22 ( db ) s11 s22 i-v curve 0 10 20 30 40 50 60 3.0 3.5 4.0 4.5 device voltage (v) device current ( ma ) optimal operating point output ip3 vs. frequency 10 15 20 25 30 00 .511 .522 .53 frequency (ghz) oip3 ( dbm ) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 ( dbm ) -40c +25c +85c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf ( db ) -40 c +25 c +85 c p1db vs. frequency 0 5 10 15 20 00.511.522.533.54 frequency (ghz) p1db ( dbm ) -40 c +25 c +85 c output power / gain vs. input power frequency = 900 mhz 12 14 16 18 20 22 -20 -16 -12 -8 -4 0 4 input power (dbm) gain ( db ) 0 4 8 12 16 20 out p ut power ( dbm ) output power gain output power / gain vs. input power frequency = 2000 mhz 8 10 12 14 16 18 -20 -16 -12 -8 -4 0 4 input power (dbm) gain ( db ) -4 0 4 8 12 16 out p ut power ( dbm ) output power gain downloaded from: http:///
triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 5 may 2009 ag303-86 ingap hbt gain block typical device rf performance (cont?d) supply bias = +6 v, r bias = 51 , i cc = 35 ma gain vs. frequency 12 14 16 18 20 22 24 01234 frequency (ghz) gain ( db ) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 00 .511 .522 .53 frequency (ghz) oip3 ( dbm ) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 ( dbm ) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 00.511.522.533.54 frequency (ghz) p1db ( dbm ) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf ( db ) -40 c +25 c +85 c typical device rf performance supply bias = +8 v, r bias = 108 , i cc = 35 ma gain vs. frequency 12 14 16 18 20 22 24 01234 frequency (ghz) gain ( db ) -40 c +25 c +85 c output ip3 vs. frequency 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 frequency (ghz) oip3 ( dbm ) -40 c +25 c +85 c output ip2 vs. frequency 20 25 30 35 40 0 200 400 600 800 1000 frequency (mhz) oip2 ( dbm ) -40c +25c +85c p1db vs. frequency 0 5 10 15 20 00.511.522.533.54 frequency (ghz) p1db ( dbm ) -40 c +25 c +85 c noise figure vs. frequency 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 frequency (ghz) nf ( db ) -40 c +25 c +85 c downloaded from: http:///
triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 5 may 2009 ag303-86 ingap hbt gain block application circuit recommended component values reference frequency (mhz) designator 50 500 900 1900 2200 2500 3500 l1 820 nh 220 nh 68 nh 27 nh 22 nh 18 nh 15 nh c1, c2, c4 .018 f 1000 pf 100 pf 68 pf 68 pf 56 pf 39 pf 1. the proper values for the components are dependent upon the intended frequency of operation. 2. the following values are contained on the evaluation board to achieve optimal broadband performance: ref. desig. value / type size l1 39 nh wirewound inductor 0603 c1, c2 56 pf chip capacitor 0603 c3 0.018 f chip capacitor 0603 c4 do not place r1 22.1 1% tolerance 0603 recommended bias resistor values supply vol tage r1 val ue s i z e 5 v 22.1 ohms 0603 6 v 51 ohms 0805 7 v 80 ohms 1206 8 v 108 ohms 1210 9 v 137 ohms 1210 10 v 166 ohms 1210 12 v 223 ohms 2010 the proper value for r1 is dependent upon the supply voltage and allows for bias stability over temperature. wj recommends a minimum supply bias of +5 v. a 1% tolerance resistor is recommended. typical device data s-parameters (v device = +4.23 v, i cc = 35 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -25.41 -178.61 21.90 177.08 -24.39 2.68 -19.43 -6.66 250 -24.87 155.73 21.78 166.27 -24.78 2.50 -19.45 -23.90 500 -21.45 140.47 21.52 152.92 -24.79 0.95 -22.15 -58.28 750 -21.60 121.87 21.11 140.36 -24.66 -0.65 -20.82 -83.69 1000 -22.37 104.08 20.62 128.55 -24.69 -0.47 -19.91 -103.53 1250 -22.85 90.28 20.09 117.05 -24.39 0.10 -18.42 -120.77 1500 -23.73 71.50 19.48 106.85 -23.69 0.62 -17.78 -130.98 1750 -25.75 49.04 18.90 96.96 -23.87 -1.60 -16.51 -140.18 2000 -25.80 20.48 18.25 87.61 -23.36 -1.98 -16.04 -146.19 2250 -20.60 4.51 17.68 79.42 -23.35 -1.35 -14.44 -135.98 2500 -21.35 -10.34 17.27 73.31 -23.42 -5.50 -14.66 -143.15 2750 -21.07 -27.85 16.73 64.91 -22.38 -6.48 -14.71 -151.02 3000 -20.28 -38.57 16.22 57.01 -22.30 -5.72 -15.40 -161.21 3250 -20.61 -43.39 15.75 49.56 -22.06 -7.56 -16.08 -172.88 3500 -21.43 -46.83 15.30 42.14 -21.79 -9.98 -16.63 172.37 3750 -23.21 -45.68 14.83 34.70 -21.14 -14.32 -16.45 152.74 4000 -25.23 -33.68 14.43 27.45 -21.01 -19.42 -15.95 135.04 4250 -27.97 -14.82 14.02 20.33 -20.54 -19.39 -14.63 121.85 4500 -28.62 21.21 13.56 13.29 -19.99 -23.59 -13.70 110.85 4750 -28.24 50.04 13.16 5.94 -19.74 -27.50 -12.98 104.47 5000 -27.40 61.17 12.84 -0.90 -19.45 -32.13 -12.53 101.02 5250 -32.61 78.84 12.46 -7.21 -19.53 -34.94 -12.98 97.98 5500 -38.22 144.81 12.12 -13.47 -19.19 -37.72 -13.34 99.21 5750 -28.58 -149.36 11.86 -19.80 -18.83 -41.09 -14.62 100.79 6000 -24.71 -137.35 11.61 -26.11 -18.61 -44.88 -15.38 100.73 device s-parameters are available for download from the website at: http://www.triquint.com c1 blocking capacitor rf out l1 rf choke c3 0.018 f r1 bias resisto r rf in c4 bypass capacito r c2 blocking ca p acito r vcc icc = 35 m a a g303-86 downloaded from: http:///
triquint semiconductor, inc ? phone 1-800-951-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 5 may 2009 ag303-86 ingap hbt gain block AG303-86G (lead-free sot-86 packag e) mechanical information this package is lead-free/rohs-c ompliant. it is compatible with both lead -free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the pins is ann ealed matte tin over copper. outline drawing land pattern product marking the component will be marked with a ?p? designator followed by a two-digit numeric lot code on the top surface of the package. the obsolete tin-lead package is marked with an ?e? designator followed by a two-digit numeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1c value: passes 1000v min. test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v min. test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias ar e critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the boar d contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. downloaded from: http:///
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